| 摘要 |
The method of manufacturing capacitor comprises the steps of : forming a memory cell transistor, a first insulating layer(12), a second insulating layer(13) and a third insulating layer(14) on a semiconductor substrate(11); forming a buried contact hole by etching the first, the second and the third insulating layer selectively and depositing a doped polysilicone(15); depositing a forth insulating layer(16) on the polysilicone(15) and patterning the forth insulating layer to form a ridge(16); forming a side wall with a fifth insulating layer(17) on the side of the forth insulating layer(16); etching the polysilicone(15) to form a step part; removing the forth insulating layer(16) and forming a side wall with a sixth insulating layer(18); removing the fifth insulating layer(17) and the polysilicone(15); and forming a dielectric film and a plate after removing the sixth insulating layer(18).
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