| 摘要 |
PURPOSE: To prove the resin sealed semiconductor device and the manufacturing method of the device, wherein a resin sealing step and an inner-lead bonding step are performed at the same time. CONSTITUTION: A second semiconductor substrate 3, wherein an electronic circuit is provided, or an inclusion 4 is overlapped on a first semiconductor substrate 1 through a sealing resin layer 5, and used as a pushing part in a resin sealing step. For the second semiconductor substrate 3 or the inclusion 4, the material having the equal or approximate linear expansion coefficient as the first semiconductor substrate 1 is selected. Thus, warping is eliminated, and the attachment of a heat radiating member 8 of copper or copper-based material becomes easy. Furthermore, the thickness of the sealing resin layer 5, which is inserted between the first semiconductor substrate 1 and the second semiconductor substrate 3 or the inclusion 4, is made to be the size so that a bump electrode 2 is embedded. Thus, the flow of the fused resin can be suppressed to the degree of the edges of the first and second semiconductor substrates 1 and 3 or the inclusion 4, and a conventional support ring is omitted. In the resin sealing step, e.g. heat for connecting the lead 6 to the metal bump electrode 2 in a bonding step is utilized. |
