Dubbel gediffundeerde mosfet cel.,申请号NL19890001599-传众专利搜索

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发明名称	Dubbel gediffundeerde mosfet cel.
摘要
申请公布号	NL191913(C)	申请公布日期	1996.10.04
申请号	NL19890001599	申请日期	1989.06.23
申请人	HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.	发明人
分类号	H01L29/06;H01L29/78;(IPC1-7):H01L29/41;H01L29/772	主分类号	H01L29/06
代理机构		代理人
主权项
地址

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