| 摘要 |
A surface defect evaluating apparatus comprises an X-ray generator having a non-winding type cathode, a first slit device for shaping the X-ray flux from the X-ray generator, a diffraction crystal for obliquely receiving a slit-form X-ray flux passing through the slit device and diffracting the X-ray flux on a specific crystal plane, a second slit device for shaping the X-ray flux from the diffraction crystal, a photographic plate for detecting the intensity distribution of the flux diffracted on the specific crystal plane of a sample such as a semiconductor wafer after a slit-form X-ray flux passing through the second slit device obliquely irradiates the sample, a slit device, and a scintillator, installed at the back side of the photographic plate for detecting the intensity of the X-ray flux.
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