SEMICONDUCTOR INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF

摘要

In a circuit containing integrated MOS transistors and/or bipolar transistors, the load resistors arranged as thin-film strips (14) on the field oxide regions (2) separating the active transistor regions consist of polycrystalline silicon (4) which is produced at the same time as the gate electrodes (24) and/or the emitter or base terminal regions of the bipolar transistors on the substrate (1) containing the integrated circuit. The load resistors (14) are structured by means of an oxide mask (5) which acts as an etching barrier in structuring the gate electrode which consists of a polysilicon (24) double layer and a refractory metal silicide (27). Since only the polysilicon (4) of the gate level (24) is used without the silicide (27) on top of it for the load resistors (14), the sheet resistance of the load resistors (14) can be adjusted independently of that of the gates (24, 27). The invention can be used for CMOS and bipolar CMOS circuits. ……