FORMATION METHOD OF GATE OXIDE OF SEMICONDUCTOR DEVICE

摘要

The method is for removing incomplete characteristic caused by metallic impurity or natural oxide layer. To form the gate, oxide layer is processed under low temp.. The gas atmosphere is mixed with N2, O2 and dichloroethylene (DCE) which rates are 30:0.5:0.47 standard litter per minute(SLPM) respectively in rising temp. and stabilization processes are performed before main oxidation process. The gas pressure for process is greater than 1.5 atmospheric pressure.