METHOD OF MANUFACTURING BURIED LAYER ON THE SEMICONDUCTOR BIPOLAR DEVICE

摘要

The present invention is to provide a method for fabricating semiconductor bipolar device having an improved characteristic of the device. The method for fabricating semiconductor bipolar device according to the present invention comprises: a)forming a oxide layer 22 on a semiconductor substrate 21; b) forming a nitride layer 23 on the oxide layer 22; c) removing the oxide layer 22 and the nitride layer 22 using etching process; d) forming a passivation layer 24 on the upper portion of the exposed semiconductor substrate 21; d) implanting impurity ions; e) forming a buried layer by performing a thermal process for diffusion; and f) forming a epi-layer after removing the nitride layer 23 and the oxide layer 22. Compared with the prior art, since the oxide layer 22 and the nitride layer 23 are more thinner than that of the prior art. Thereby, a under cut can be reduced and defects which are caused in the buried layer can be eliminated.