发明名称 Capacitive semiconductor pressure sensor
摘要 A micromechanically manufacturable pressure sensor has a cavity produced in an auxiliary layer that is covered with a membrane layer, the cavity is produced via recesses in the membrane layer. These recesses are subsequently closed by portions of a closure layer. Further layers can be applied on the closure layer. Portions of the further layers and closure layer are removed above the membrane layer.
申请公布号 US5631428(A) 申请公布日期 1997.05.20
申请号 US19950561854 申请日期 1995.11.22
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 CATANESCU, RALF;SCHEITER, THOMAS;HIEROLD, CHRISTOFER
分类号 G01L9/12;G01L9/00;H01L29/84;(IPC1-7):G01L9/12 主分类号 G01L9/12
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