发明名称 |
Capacitive semiconductor pressure sensor |
摘要 |
A micromechanically manufacturable pressure sensor has a cavity produced in an auxiliary layer that is covered with a membrane layer, the cavity is produced via recesses in the membrane layer. These recesses are subsequently closed by portions of a closure layer. Further layers can be applied on the closure layer. Portions of the further layers and closure layer are removed above the membrane layer.
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申请公布号 |
US5631428(A) |
申请公布日期 |
1997.05.20 |
申请号 |
US19950561854 |
申请日期 |
1995.11.22 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
CATANESCU, RALF;SCHEITER, THOMAS;HIEROLD, CHRISTOFER |
分类号 |
G01L9/12;G01L9/00;H01L29/84;(IPC1-7):G01L9/12 |
主分类号 |
G01L9/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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