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发明名称
METHOD OF FABRICATING MOSFET PRESSURE SENSOR USING PIEZOELECTRIC EFFECT
摘要
申请公布号
KR1019970009173(B1)
申请公布日期
1997.06.07
申请号
KR1019930016258
申请日期
1993.08.20
申请人
发明人
分类号
主分类号
代理机构
代理人
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