Semiconductor wiring spacers for Schottky double diode

摘要

The semiconductor wiring spacer has a semiconductor structure which is a mesa structure formed with two back to back n-p-n structures and having glass protrusions above the outer structure. After the semiconductor structure is formed a thin glass passivation layer 10-20 microns thick is formed on the upper and lower surface. The upper and lower surfaces are then selectively etched using masking techniques, leaving outer wire connection brazing surfaces (31) and protruding glass mounts (30) as well as leaving a side glass section covering (8).