发明名称 Process for fabricating non-volatile memory cells having improved voltage coupling ratio by utilizing liquid phase
摘要 A process for fabricating non-volatile memory cells having improved voltage coupling ratio by utilizing liquid phase deposition. Polysilicon spacers resulting from the liquid phase deposition increase the surface area of the dielectric layer between floating gate and control gate layers.
申请公布号 US5646059(A) 申请公布日期 1997.07.08
申请号 US19950422876 申请日期 1995.04.17
申请人 UNITED MICROELECTRONICS CORPORATION 发明人 SHEU, YAU-KAE;HONG, GARY
分类号 H01L21/8247;(IPC1-7):H01L21/824 主分类号 H01L21/8247
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