发明名称 |
Process for fabricating non-volatile memory cells having improved voltage coupling ratio by utilizing liquid phase |
摘要 |
A process for fabricating non-volatile memory cells having improved voltage coupling ratio by utilizing liquid phase deposition. Polysilicon spacers resulting from the liquid phase deposition increase the surface area of the dielectric layer between floating gate and control gate layers.
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申请公布号 |
US5646059(A) |
申请公布日期 |
1997.07.08 |
申请号 |
US19950422876 |
申请日期 |
1995.04.17 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
SHEU, YAU-KAE;HONG, GARY |
分类号 |
H01L21/8247;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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