发明名称 Projection exposure apparatus and method with changing imaging characteristics and illumination conditions
摘要 While a mask is illuminated under a predetermined illumination condition to transfer the image of the pattern of the mask to a substrate, the amount of imaging characteristic change of a projection optical system is calculated by the use of calculation parameters corresponding to the illumination condition, and the imaging characteristics are adjusted based on the calculated amount. Further, when the pattern on the mask or the illumination condition is changed, the amount of imaging characteristic change is calculated based on an amount of energy stored in the projection optical system prior to the changing of the condition, pattern exposure is started immediately after the changing of the condition, and the imaging characteristics are adjusted based on the calculated amount.
申请公布号 US5661546(A) 申请公布日期 1997.08.26
申请号 US19940306899 申请日期 1994.09.16
申请人 NIKON CORPORATION 发明人 TANIGUCHI, TETSUO
分类号 G03F7/20;H01L21/027;(IPC1-7):H01L21/30 主分类号 G03F7/20
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