| 摘要 |
PCT No. PCT/SE97/00495 Sec. 371 Date Oct. 27, 1998 Sec. 102(e) Date Oct. 27, 1998 PCT Filed Mar. 24, 1997 PCT Pub. No. WO97/36363 PCT Pub. Date Oct. 2, 1997A gas-insulated semiconductor valve for high voltage power has an elongated valve stack with a plurality of semiconductor elements. The valve stack is provided with electrostatic shields for reducing the stresses on the insulating medium. The shields comprise a plurality of annular shields distributed along the longitudinal axis of the valve stack. The shields are arranged in planes which are substantially perpendicular to the longitudinal axis of the stack and surround the valve stack. The curved part of each shield has a substantially constant radius of curvature. |
