发明名称 |
Protective configuration against electrostatic discharges in semiconductor components controllable by field effect |
摘要 |
A configuration for protecting a first semiconductor component being controllable by field effect against electrostatic discharges, includes a voltage-limiting, protective, second semiconductor component being connected to the gate terminal of the first semiconductor component. The second semiconductor component is an integrated bipolar transistor having a collector-to-emitter path being connected between the drain terminal and the gate terminal of the first semiconductor component.
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申请公布号 |
US5672893(A) |
申请公布日期 |
1997.09.30 |
申请号 |
US19960590931 |
申请日期 |
1996.01.24 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
TIHANYI, JENOE |
分类号 |
H01L27/04;H01L21/822;H01L27/02;H01L27/06;H01L29/78;(IPC1-7):H01L29/78;H01L23/62;H01L27/07 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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