发明名称 |
Programming flash memory using strict ordering of states |
摘要 |
A method for programming an array of memory cells wherein each cell may be placed in more than two states. The method comprises the steps of 1) selecting a plurality of different programming voltage levels wherein each programming voltage level is associated with a corresponding one of a plurality of states, and 2) applying a plurality of programming pulses to selected subsets of the array of memory cells, wherein each programming pulse has one of the programming voltage levels and one of a corresponding plurality of pulse widths such that each of the memory cells of a corresponding one of the selected subsets are programmed directly to a corresponding one of the plurality of states by a corresponding programming pulse.
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申请公布号 |
US5677869(A) |
申请公布日期 |
1997.10.14 |
申请号 |
US19950572730 |
申请日期 |
1995.12.14 |
申请人 |
INTEL CORPORATION |
发明人 |
FAZIO, ALBERT;ATWOOD, GREGORY E.;MI, JAMES Q.;RUBY, PAUL |
分类号 |
G11C11/56;G11C16/34;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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