发明名称 |
Method for fabricating a semiconductor laser diode |
摘要 |
A method for fabricating a semiconductor laser diode includes the steps of forming a double hetero structured semiconductor layer on a substrate, forming a dielectric layer on the double hetero structured semiconductor layer, selectively etching the dielectric layer to expose a portion of the double hetero structured semiconductor layer, selectively removing the exposed semiconductor layer using the dielectric layer as a mask by liquid phase etching, and re growing a semiconductor layer on the etched portion by liquid phase epitaxy.
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申请公布号 |
US5707892(A) |
申请公布日期 |
1998.01.13 |
申请号 |
US19950560714 |
申请日期 |
1995.11.20 |
申请人 |
LG ELECTRONICS, INC. |
发明人 |
YOO, TAE KYUNG;CHO, MEOUNG WHAN;SEO, JU OK;LEEM, SHI JONG;NOH, MIN SOO |
分类号 |
H01S5/00;H01S5/10;H01S5/16;H01S5/22;H01S5/227;(IPC1-7):H01L21/20 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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