发明名称 |
Method of forming silicon nitride with varied hydrogen concentration |
摘要 |
On TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si-H bonds is reduced.
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申请公布号 |
US5714408(A) |
申请公布日期 |
1998.02.03 |
申请号 |
US19960766619 |
申请日期 |
1996.12.13 |
申请人 |
DENSO CORPORATION |
发明人 |
ICHIKAWA, YUJI;TANAKA, YASUSHI;SOUKI, YASUO;KUBOKOYA, RYOUICHI;KUROYANAGI, AKIRA;SHIOYA, HIROHITO |
分类号 |
H01L27/02;(IPC1-7):H01L21/318 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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