Structure and method for semiconductor device

摘要

A semiconductor device and method of forming the same is disclosed. The semiconductor device includes a substrate having first and second device regions. The first device region includes a first source/drain (S/D) region and the second device region includes a plurality of second S/D regions. The semiconductor device further includes a plurality of first recesses in the first S/D region and a plurality of second recesses, one in each of the second S/D regions. The semiconductor device further includes a first epitaxial feature having bottom portions and a top portion, wherein each of the bottom portions is in one of the first recesses and the top portion is over the first S/D region. The semiconductor device further includes a plurality of second epitaxial features each having a bottom portion in one of the second recesses. The second epitaxial features separate from each other.

主权项

1. A method of forming a semiconductor device, comprising:
providing a semiconductor substrate with first and second device regions, wherein the first device region includes a first source/drain (S/D) region and the second device region includes a plurality of second S/D regions; etching a plurality of first recesses in the first S/D region and a plurality of second recesses in the second S/D regions; growing a first plurality of first epitaxial features in the first recesses and a second plurality of first epitaxial features in the second recesses; and growing a third plurality of second epitaxial features over the first plurality and a fourth plurality of second epitaxial features over the second plurality, wherein the first and third epitaxial features are different, and the second and fourth epitaxial features are different.