发明名称 Circuit for repair of flash memory cells and a method of repair
摘要 The present invention relates to a circuit for repair of flash memory cell and a method of repair and, more particularly, to a circuit for repair of flash memory cell and a method of repair which facilitates the effective repair by supplying external addresses outputted from column address buffer to the column decoder in normal condition and supplying internal addresses generated in the inside at the time of repair by utilizing an address control circuit.
申请公布号 US5748526(A) 申请公布日期 1998.05.05
申请号 US19960698514 申请日期 1996.08.15
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 LEE, JONG OH
分类号 G11C17/00;G11C16/06;G11C29/00;G11C29/04;(IPC1-7):G11C16/04 主分类号 G11C17/00
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