Integrated horizontal unipolar transistor having a doped layer forming an internal gate of the transistor and at least one integrated capacitor having a first electrode connected to a source of the transistor and a second electrode to the fixed potential

摘要

PCT No. PCT/DE94/01066 Sec. 371 Date May 23, 1996 Sec. 102(e) Date May 23, 1996 PCT Filed Sep. 15, 1994 PCT Pub. No. WO95/08190 PCT Pub. Date Mar. 23, 1995A semiconductor detector structure consists of a unipolar or single-pole transistor disposed or arranged on a substantially depleted semiconductor body, with a drain, a source, a resetting contact, a top gate and a potentially floating layer forming at least one gate of the unipolar transistor, as well as at least one capacitor. The source is directly connected to the first electrode or electrodes of the capacitor or capacitors. The capacitor or the capacitors are integrated jointly with or into the semiconductor structure.