| 发明名称 |
Method of making a selective epitaxial growth circuit load element |
| 摘要 |
A method of manufacturing a polysilicon plug in an integrated circuit semiconductor device wherein the polysilicon plug is selectively doped to act as a resistive load or alternatively to act as a diode load. The polysilicon load can be used in an SRAM memory cell.
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| 申请公布号 |
US5804470(A) |
申请公布日期 |
1998.09.08 |
| 申请号 |
US19960735463 |
申请日期 |
1996.10.23 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WOLLESEN, DONALD L. |
| 分类号 |
H01L21/02;H01L21/768;H01L27/11;(IPC1-7):H01L21/20;H01L21/44 |
主分类号 |
H01L21/02 |
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