Novel complementary C-MOS transistor pair

摘要

In a complementary transistor pair, the two transistors are arranged one above the other in the growth direction and the upper and lower layers of the transistor layer sequences form the respective gate regions of the first and second transistors. Also claimed is a process for producing the basic structure of a complementary transistor pair by successively forming a lower gate region layer, an insulating layer, a p-channel layer, an insulating layer, an n-channel layer, an insulating layer and an upper gate region. Further claimed are processes for producing a complementary transistor pair.