发明名称 Burst EDO memory address counter
摘要 A counter comprised of two flip flops and a multiplexer produces a sequential or interleaved address sequence. The addresses produced are used to access memory elements in a Burst Extended Data Output Dynamic Random Access Memory (Burst EDO or BEDO DRAM). Input addresses in combination with a sequence select signal are logically combined to produce a multiplexer select input which selects between true and compliment outputs of a first flip flop to couple to an input of a second flip flop to specify a toggle condition for the second flip flop. Outputs of the counter are compared with outputs of an input address latch to detect the end of a burst sequence and initialize the device for another burst access. A transition of the Read/Write control line during a burst access will terminate the burst access and initialize the device for another burst access.
申请公布号 US5850368(A) 申请公布日期 1998.12.15
申请号 US19970922194 申请日期 1997.09.02
申请人 MICRON TECHNOLOGY, INC. 发明人 ONG, ADRIAN E.;ZAGAR, PAUL S.;WILLIAMS, BRETT L.;MANNING, TROY A.
分类号 G11C8/04;(IPC1-7):G11C8/00 主分类号 G11C8/04
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