| 发明名称 |
Semiconductor Device and Method for Manufacturing the Same |
| 摘要 |
Provided herein is a semiconductor device is provided. The semiconductor device includes a substrate including a MEMS region and a connection region thereon; a dielectric layer disposed on the substrate in the connection region; a poly-silicon layer disposed on the dielectric layer, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer; and a passivation layer covering the dielectric layer, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer. |
| 申请公布号 |
US2016355398(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201514731433 |
申请日期 |
2015.06.05 |
| 申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
CHEN YAN-DA;CHEN WENG YI;HSU CHANG-SHENG;WANG KUAN-YU;LIN YUAN SHENG |
| 分类号 |
B81C1/00;B81B7/00;B81B3/00 |
主分类号 |
B81C1/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate comprising a MEMS region and a connection region thereon; a dielectric layer disposed on said substrate in said connection region; a poly-silicon layer disposed on said dielectric layer, wherein said poly-silicon layer serves as an etch-stop layer; a connection pad disposed on said poly-silicon layer; and a passivation layer covering said dielectric layer, wherein the passivation layer comprises an opening that exposes said connection pad and a transition region between said connection pad and said passivation layer. |
| 地址 |
HSINCHU TW |
