Method for forming zig-zag bordered openings in semiconductor structures

摘要

The present invention discloses a method for forming a zig-zag bordered opening in a semiconductor structure such that the film stress in a barrier/glue layer of TiN can be significantly reduced to eliminate the occurrence of volcano defect in which delamination or peeling-off of the TiN layer from the contact opening occurs. The method can be easily carried out by providing a mask that has a desirable zig-zag pattern during a photomasking step performed on the semiconductor device.