| 发明名称 |
Method for etching a semiconductor substrate and etching system |
| 摘要 |
The method and system of the invention allow etching even relatively thick layers on the rear side of a semiconductor substrate where the front side is resist-free. An etching solution is sprayed in fine droplets onto the rear side of the semiconductor substrate. The semiconductor substrate may thereby be heated to a temperature </=100 DEG C.
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| 申请公布号 |
US5874366(A) |
申请公布日期 |
1999.02.23 |
| 申请号 |
US19970863371 |
申请日期 |
1997.05.27 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
SPORER, ROLAND;MATHUNI, JOSEF;GSCHWANDTNER, ALEXANDER |
| 分类号 |
H01L21/306;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/306 |
| 代理机构 |
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