Disclosed is a method and apparatus for polishing a semiconductor wafer. This invention describes a novel in situ method for eliminating residual slurry and slurry abrasive particles on the wafer. A reactant is added to the slurry during the end of the Chemical Mechanical Polish (CMP) process to dissolve the slurry and etch the abrasive particles.
申请公布号
US5896870(A)
申请公布日期
1999.04.27
申请号
US19970814675
申请日期
1997.03.11
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
HUYNH, CUC K.;LINDE, HAROLD G.;MARMILLION, PATRICIA E.;PALAGONIA, ANTHONY M.;PIERSON, BERNADETTE A.;RUTTEN, MATTHEW J.
