Method for forming a capacitor in a memory cell in a dynamic random access memory device

摘要

In a method for forming an annular-shaped and vertically extending bottom electrode of a memory cell capacitor, a conductive film is formed on an inter-layer insulator. A photo-resist material is applied on the conductive film to form a photo-resist film thereon. The photo-resist film is patterned by a photo-lithography using a mask which includes a transparent plate-like body and a phase shifting film selectively provided on a predetermined region of the transparent plate-like body to form an annular-shaped and vertically extending photo-resist pattern over the conductive film. The conductive film is subjected to an anisotropic etching, in which the annular-shaped and vertically extending photo-resist pattern is used as a mask, to form an annular-shaped and vertically extending bottom electrode under the annular-shaped and vertically extending photo-resist pattern. The annular-shaped and vertically extending photo-resist pattern is removed.