发明名称 Methods for measuring surface area
摘要 Methods for measuring the surface area of a top region of a silicon wafer by initially depositing a monolayer of hexamethyldisilizane over the surface area of the silicon wafer. The silicon wafer is then positioned within a vacuum environment. Next, oxygen is introduced into the vacuum chamber so that the HMDS substantially reacts with the oxygen to form products such as carbon dioxide and water. At least one of the water and the carbon dioxide are measured from the known volume of the vacuum chamber. Based on the amount of product formed, the amount of HMDS covering the surface area is determined. Finally, from the amount of HMDS calculated to be originally positioned on the surface area, a value for the surface area is determined.
申请公布号 US5899702(A) 申请公布日期 1999.05.04
申请号 US19960755317 申请日期 1996.11.22
申请人 MICRON TECHNOLOGY, INC. 发明人 NUTTALL, MICHAEL;HURLEY, KELLY
分类号 G01B21/28;H01L21/66;(IPC1-7):H01L21/66;H01L21/306 主分类号 G01B21/28
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