发明名称 |
Quasi-mesh gate structure for lateral RF MOS devices |
摘要 |
A quasi-mesh gate structure for the RF MOS transistor having a conductive plug source-body-backside connection is disclosed. The RF MOS transistor having the quasi-mesh gate structure utilizes significantly shorter feeding gate paths as compared to the long feeding gate paths used in the prior art RF MOS devices. The RF MOS transistor having the quasi-mesh gate structure can utilize the polysilicon gates or silicided gates. This results in simplification of the fabrication process and/or improved performance at high frequencies. |
申请公布号 |
US5900663(A) |
申请公布日期 |
1999.05.04 |
申请号 |
US19980020256 |
申请日期 |
1998.02.07 |
申请人 |
XEMOD, INC. |
发明人 |
JOHNSON, JOSEPH HERBERT;D'ANNA, PABLO EUGENIO |
分类号 |
H01L21/768;H01L23/482;H01L29/06;H01L29/10;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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