| 摘要 |
PROBLEM TO BE SOLVED: To measure simply and accurately the oxidation quantity of a compound semiconductor material, by applying the process with the same condition as its manufacturing process to a material with a faster oxidation speed than it, and by measuring the variation of the electric resistance of the material. SOLUTION: Growing epitaxially on a semi-insulating GaAs substrate 1 by an MBE method, etc., an n-type AlAs layer 2 using AlAs with a larger oxidation rate than GaAs, a protective film 3 is formed thereafter. Removing one-portions of the protective film 3 and an oxidation layer 4 by etching them, electrodes 5, 6 are formed by a lift-off method to complete a manufacture evaluating pattern. Hereupon, when denoting the thickness of the n-type AlAs layer 2 by d, the thickness of the oxidation layer 4 by X, the widths of the electrodes 5, 6 by W, and the distance between the electrodes 5, 6 by L, the value of a resistance R therebetween is represented by R=ρL/W(d-X). Measuring for AlAs previously the correlation of its electric resistance to its oxidation quantity, the electric resistance measured for an arbitrary manufacturing process is compared with the correlation to make measurable the oxidation quantity of AlAs.
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