| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser diode which can be used in combination with a high-speed drive IC, using an npn transistor and is constituted by using a p-type GaAs substrate, having a performance which is equal to or higher than that of a conventional example. SOLUTION: A semiconductor laser diode is provided with a p-type GaAs semiconductor substrate 11, a p-type semiconductor layer region which contains a p-type AlGaAs lower clad layer 12 and is formed on the substrate 11, and an n-type semiconductor layer region which contains an n-type AlGaAs upper clad layer 14 and is formed on the p-type semiconductor layer region with an active layer 13 in between. The upper clad layer 14 is a semiconductor laser diode composed of a first region, which is formed on almost the entire surface of the active layer 13 for confining light in the layer 13 and a ridge section for injecting electric current into the laser oscillating region of the active layer 13 of a prescribed width is made of Alx Ga1-x As (x>=0.4), and contains carriers at a concentration of has than or equal to 6×10<17> cm<-3> .
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