Compound semiconductor epitaxial wafer

摘要

A compound semiconductor epitaxial wafer added with nitrogen to provide a high luminous efficiency. Epitaxial layers are grown on a single crystalline substrate 4 made of gallium phosphide or gallium arsenide to form a compound semiconductor epitaxial wafer EW. The epitaxial layers include at least an nitrogen-added gallium phosphide arsenide mixed crystalline epitaxial layer having an n-type carrier concentration descending gradually toward the uppermost surface of the grown layer in a continuous or stepwise manner before p-type impurity is diffused, and contain an intermediate layer 83 with an n-type carrier concentration of 4x1014/cm3 or more and less than 3.5x1015/cm3, and a surface layer 84 having an n-type carrier concentration equals to or lower than that for the intermediate layer 83.