发明名称 |
DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films |
摘要 |
An exemplary implementation of the present invention includes a capacitor for a dynamic random access memory cell having a first plate; a second plate; and a dielectric layer interposed between said first and second plates, with the dielectric layer being dominated by electrode-limited conduction, which includes tantalum pentoxide and silicon nitride, or a combination of the two. In a preferred implementation, one of the two capacitor plates is formed from a silicon-germanium layer, the second plate is formed from a metal and the dielectric layer is formed from tantalum pentoxide.
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申请公布号 |
US5930106(A) |
申请公布日期 |
1999.07.27 |
申请号 |
US19960678729 |
申请日期 |
1996.07.11 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DEBOER, SCOTT J.;SCHUEGRAF, KLAUS F.;WEIMER, RONALD A.;THAKUR, RANDHIR P. S. |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01G4/008;H01G4/06 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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