METHOD OF PRODUCTION OF EPITAXIAL LAYERS OF SILICON CARBIDE (VERSIONS), STRUCTURE OF SILICON CARBIDE (VERSIONS)

摘要

FIELD: method of production of epitaxial layers of silicon carbide free of defects in form of micropipes. SUBSTANCE: method includes growth of epitaxial layer of silicon carbide on substance from silicon carbide by liquid phase epitaxy from melt of silicon carbide in silicon and in element which increases solubility of silicon carbide in melt. Atom per cent of this element prevails over atom per cent of silicon in melt. Defects in form of micropipes spread by substrate into epitaxial layer are closed with the help of continuation of growth of epitaxial layer under corresponding conditions until thickness of epitaxial layer reaches thickness at which defects in form of micropipes present in substrate will not be reproduced further in epitaxial layer. EFFECT: considerable reduction of number of defects in form of micropipes in epitaxial layer. 15 cl, 6 dwg