Sensor especially an acceleration, inclination, vibration or rotational speed sensor useful in automobiles, robotics, medicine, measurement and control or machine construction

摘要

A sensor structure has light detectors for detecting light passage through openings in a structured semiconductor layer. A sensor structure for measuring acceleration or related parameters has a seismic mass which is structured in a semiconductor layer (1) on a substrate (2) and which is moved by force or acceleration, the combination of the semiconductor layer and the seismic mass having openings perpendicular to the plane of the acceleration. The novelty is that light detectors are provided on the substrate for detecting light which passes perpendicular to the acceleration plane through the openings. An Independent claim is also included for production of the above sensor structure. Preferred Features: The substrate is a silicon substrate and the semiconductor layer consists of single crystal silicon. Each light detector (3) is an electronic device integrated in the substrate and has a light sensitive region with an impedance which varies in accordance with the incident light. The openings form a stripe structure and have an aspect (height/width) ratio of greater than 3. The semiconductor layer is formed by wafer bonding of a second substrate. The seismic mass is designed such that the light detectors emit a maximum or minimum signal. A deflection limiting element is provided for limiting the maximum deflection of the seismic mass and comprises a bending beam which allows two-stage deflection limiting.