| 摘要 |
PROBLEM TO BE SOLVED: To improve the degree of integration by providing independent floating wirings which are not connected anywhere and made of the same material as a gate material of transistors vertically disposed below a power wiring AL laid and connected in the horizontal direction of a basic gate array. SOLUTION: Independent floating wirings 21 which are not connected anywhere and made of the same material as a gate material of transistors are separately provided at p-type and n-type transistor regions forming basic gates, and signals existing inside a power potential feed AL1 wiring 5 and GND potential feed AL1 wiring 6 or signal transfer grids existing outside are used to enable the two-line transfer. P- and n-type transistors are separated in an SOG type basic gate array while floating wirings are provided separately for transistors whereby cells can be inverted upside down and disposed on a basic gate array 20c and the degree of integration can be improved.
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