| 摘要 |
PROBLEM TO BE SOLVED: To increase the effective surface area of a capacitor in a memory cell by forming a second capacitor electrode along the side wall of a capacitor trench, electrically connecting first and second capacitor electrodes at the side wall of the first capacitor electrode and forming a lower electrode of the capacitor. SOLUTION: A second capacitor electrode 11 is formed like a side wall along the periphery of a pattern of a first capacitor electrode 9 at the side wall of the first capacitor electrode 9 and the side wall of a capacitor trench 10 formed into a second layer insulation film 6 and is connected to the first capacitor electrode a at the side wall. Capacitor trenches are formed into a layer insulation film 6 between patterns of many first capacitor electrodes 9 formed in memory cells at a lower part thereof. When the second capacitor electrode 11 is formed along the side wall of the capacitor trench, and a first capacitor of the memory cell is composed of the first and second capacitor electrodes 9, 11. Thus the effective surface area of the capacitor can be increased in the memory cell.
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