发明名称 SUBSTRATE TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate treating device in which the interval between electrodes can be changed and which can make plasma treatment highly efficiently. SOLUTION: Parallel platy electrodes are constituted of a cathode 24 and an anode 33 which is made vertically movable. Then an exhaust plate 50 is provided around the anode 33 and a plurality of exhaust openings 51 is made through the plate 50. In addition, a baffle plate 52 is installed to the outer end section of the plate 50 as a shielding member. Since the exhaust plate 50 and baffle plate 52 move together with the anode 33 when the interval between the cathode 24 and anode 33 is changed by moving the anode 33 in the vertical direction, plasma can be confined in an inner tank 30 and the plasma treating efficiency of a substrate treating device is improved. Since a gas is discharged through the exhaust openings 51 of the exhaust plate 50, the flow of a reactive gas becomes uniform around the anode 33 and uniform plasma treatment becomes possible.
申请公布号 JP2000058518(A) 申请公布日期 2000.02.25
申请号 JP19980230208 申请日期 1998.07.31
申请人 KOKUSAI ELECTRIC CO LTD 发明人 TAKEBAYASHI YUJI;KANAZAWA GENICHI;TAKESHITA MITSUNORI
分类号 H05H1/46;C23C16/50;C23F4/00;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H05H1/46
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