| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a semiconductor single crystal by Czochralski technique through application of both magnetic field and electric current, designed to uniformly distribute the impurity concentration of the single crystal grown in its pull-up direction. SOLUTION: This method for growing a semiconductor single crystal by Czochralski technique through application of both magnetic field and electric current comprises changing electric current value as the single crystal is pulled up under a fixed magnetic field intensity, or changing applied magnetic field intensity as the single crystal is pulled up under a fixed electric current value, or changing both electric current value and magnetic field intensity as the single crystal is pulled up.
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