METHOD FOR MANUFACTURING FLOATING GATE OF NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a floating gate is provided to improve the endurance of a non-volatile memory device by making a tip of the floating gate uniform and increasing the quality of an insulation layer between a control gate and the floating gate. CONSTITUTION: The method for manufacturing a floating gate comprises the steps of: forming a first conduction layer on a semiconductor substrate having an insulation layer; forming a native oxidation layer formed on the first conduction layer; forming a second conduction layer on the first conduction layer; forming a first gate electrode by etching a predetermined part of the first and second conduction layer; forming an insulation layer on the semiconductor substrate including sides of the first gate electrode; and forming a second gate electrode on a predetermined region of the insulation layer.