OXIDATION TECHNIQUE CAPABLE OF CONTROLLING AN ULTRA THIN FILM GATE OXIDE

摘要

PURPOSE: An oxidation technique is provided to form a gate oxide by controlling a partial pressure so as to grow a thin oxide of a high quality to mix an oxidant and an etchant. CONSTITUTION: The method of forming a gate oxide for a field effect transistor (10) on a wafer (12) comprises the steps of: disposing the wafer (12) in a process chamber; and flowing in the process chamber a first etchant with an oxidant for forming the gate oxide, wherein a second etchant is flown in the chamber prior to the step of flowing the first etchant in the chamber. The etchant comprises a hydrogen or a formation gas of a hydrogen and a nitrogen. The oxidant comprises a carbon-dioxide, and is flown in by a flow rate of about 0.5 liters/min. The second etchant is identical to the first etchant.