Halbleitervorrichtung und Halbleiterstruktur mit Kontaktierung

摘要

The invention relates to a semiconductor device (100) consisting of a first semiconductor area (2) of a defined conductivity type within which a contact area (5), which is adjacent to a surface (20) and of the same conductivity type as the first semiconductor area (2), as well as a buried island area (3), whose conductivity type is opposite to that of the first semiconductor area (2), are arranged. Within the contact area (5) a via hole (70) is provided for which reaches as far as the buried island area (3) and serves to contact same. By means of said semiconductor device (100) it is possible to influence a current (I) flowing to or from the contact area (5) inside a channel area (22) via depletion zones (23, 24).