发明名称 ELECTRON BEAM DRAWING METHOD
摘要 PROBLEM TO BE SOLVED: To increase the number of openings which can be selected without changing a size of a region of the opening which can be selected in electron optics and reducing an effective drawing speed, and enhance throughput. SOLUTION: In a successive transfer electron beams drawing method, after a specific region stripe 17A is drawn, movement is performed from an opening A to an opening B for a return time (a) of a stage. Thereafter, drawing of a strip 17B is started. At this time, a position of the opening is measured and a stop error quantity of the opening is made feedback to a beam biasing position on a sample, whereby correction is made and high precise drawing is performed. Incidentally, at the time of return of a stage from the stripe 17A to 17B as described above, movement of the opening is made, and additionally at the time of return of the stage from a chip 16 to a next chip, the movement of the opening may be made.
申请公布号 JP2000091182(A) 申请公布日期 2000.03.31
申请号 JP19980261403 申请日期 1998.09.16
申请人 HITACHI LTD 发明人 OTA HIROYA;SOMETA YASUHIRO;HAYATA YASUNARI;SAITO NORIO;YOSHIMURA TOSHIYUKI
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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