发明名称 STRUCTURE OF EPROM CELL AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: An EPROM cell structure and a fabrication method therefor are provided to improve degree of integration. CONSTITUTION: The EPROM cell structure has floating gates(7) formed on both slanted sides of an etched portion of a substrate(1). The floating gate(7) has an upper surface coplanar with that of a gate oxide layer(6) on the substrate(1) around the etched portion. The cell structure further has an interlayer oxide layer(8) formed over exposed entire surfaces of the floating gates(7) and the gate oxide layer(6). In addition, a control gate(9) is formed into a T-shape on the interlayer oxide layer(8) above the floating gates(7), an insulating layer(11) having contact holes is formed over the control gate(9) and the interlayer oxide layer(8). The contact holes are filled with a metallization layer(12). Furthermore, a common source(4) is formed in the substrate(1) within the etched portion, while the first and second drains(3,5) are formed in the substrate(1) out of the etched portion.
申请公布号 KR100253413(B1) 申请公布日期 2000.04.15
申请号 KR19980012247 申请日期 1998.04.07
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 LEE, DA-SOON
分类号 H01L21/8247;(IPC1-7):H01L21/824 主分类号 H01L21/8247
代理机构 代理人
主权项
地址