| 摘要 |
PURPOSE: A method for fabricating a MOS transistor is provided to simplify the fabricating process by allowing the formation of a lightly doped source and drain region without a typical gate sidewall. CONSTITUTION: In the method, a gate(2) is formed on a substrate(1), and the lightly doped source and drain region(3) is formed in the substrate(1) at sides of the gate(2) by implanting impurity ions with low concentration. Next, a diffusion barrier(6) is formed on the lightly doped source and drain region(3) by implanting impurity ions for protection of diffusion. Thereafter, to form a heavily doped source and drain region(5), impurity ions with high concentration are implanted into the substrate(1). Thus the implanted impurity ions with high concentration push down the lightly doped source and drain region(3) and the diffusion barrier(6), so that the heavily doped source and drain region(5) is formed on the diffusion barrier(6) in the substrate(1).
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