| 摘要 |
PURPOSE: A method for fabricating a capacitor is provided to be able to increase the capacitance of the capacitor by using ZnO grain as a conductor to increase the area of total conductor. CONSTITUTION: A nitride(21) having a thickness of 50-100 angstrom is formed on a polysilicon(20), and Sb2O3 target of ZnO-2mol% below and Bi2O3-1mol% below is sputtered on the nitride(21) under the temperature of 0-450 deg.C and the thickness of 50-1000 angstrom. Then, ZnO grain(22) and an insulating layer(22) are formed into 2-dimensional net shape by forming the ZnO grain(22) into single layer through etching or polishing process after the heat treatment under the time of 20min-2hr and the temperature of 800-01200deg.C. Next, a polysilicon(24) is formed on all surface to be contacted with the ZnO grain(22).
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