| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to allow the formation of a through contact hole in a self-aligned manner without a lithography process. CONSTITUTION: In the method, the first metal layer(12a) is formed on a semiconductor substrate(11), and an insulating layer(13) is formed thereon. The insulating layer(13) and the first metal layer(12a) are then selectively patterned, and a sidewall spacer is formed on lateral sides of the patterned layers(13,12a). Next, an oxide layer(15) is grown from a portion of the substrate(11) between the adjacent sidewall spacers to an upper peripheral portion of the insulating layer(13). The insulating layer(13) is then selectively etched by using the oxide layer(15) as a mask, so that the through contact hole(16) is formed in a self-aligned manner. Next, the second metal layer is wholly formed over the oxide layer(15) and then patterned to make contact with the first metal layer(12a) by the through contact hole(16).
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