| 摘要 |
PURPOSE: A semiconductor device and a fabricating method of the same are provided to enhance the current drive performance of the device and simplify the fabricating processes as well as enhance the reliability of the device by forming asymmetrical source and drain areas. CONSTITUTION: First, a rounded trench is formed on a semiconductor substrate(31). Then, a gate insulating layer(35) extended from the surface of the semiconductor substrate is formed on a partial inner surface of the trench. Next, a gate electrode(37a) is formed to be matched with the surface of the semiconductor substrate on the gate insulating layer. Then, sidewall spacers(43) are formed on sides of the gate electrode. Finally, source and drain areas(45,45a) having depth different from each other are formed on the substrate on one side of the gate electrode and sidewall spacers.
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