| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to simplify the fabrication process and to increase the size of a unit chip. CONSTITUTION: In the method, an n-type well(12) is formed in a portion of a p-type substrate(11) where a field region and an active region are defined. A buffer oxide layer and a nitride layer are then formed in sequence on the substrate(11), and a portion of the nitride layer in the field region is removed. Next, an arsenic ion is implanted into the substrate(11) by using the remaining nitride layer as a mask, and an oxygen ion is also implanted to a greater depth than the implanted depth of the arsenic ion. Thereafter, a field oxide layer(15) is formed by sacrificial oxidation using the nitride layer as a mask, and then the nitride layer and the buffer oxide layer are removed. Next, after a gate oxide layer(16) is formed, a boron ion is implanted into the substrate(11) to a specific depth with the well(12) masked. Then, a polysilicon layer(18) for a gate electrode is formed.
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